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| BS209 DMOS Transistors (P-Channel) TO-92 .181 (4.6) min. .492 (12.5) .181 (4.6) .142 (3.6) FEATURES High input impedance Low gate threshold voltage Low drain-source ON resistance High-speed switching No minority carrier storage time CMOS logic compatible input No thermal runaway No secondary breakdown max. .022 (0.55) .098 (2.5) D G S MECHANICAL DATA Case: TO-92 Plastic Package Weight: approx. 0.18 g Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified Symbol Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage (pulsed) Drain Current (continuous) at Tamb = 25 C Power Dissipation at Tamb = 25 C Junction Temperature Storage Temperature Range 1) Value 400 400 20 120 8301) 150 -65 to +150 Unit V V V mA mW C C -VDSS -VDGS VGS -ID Ptot Tj TS Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case. Inverse Diode Symbol Max. Forward Current (continuous) at Tamb = 25 C Forward Voltage Drop (typ.) at VGS = 0 V, IF = 400 mA, Tj = 25 C IF VF Value 400 1.0 Unit mA V 4/98 BS209 ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified Symbol Drain-Source Breakdown Voltage at -ID = 100 A, VGS = 0 V Gate-Body Leakage Current, Forward at -VGSF = 20 V, VDS = 0 V Gate-Body Leakage Current, Reverse at -VGSR = 20 V, VDS = 0 V Drain Cutoff Current at -VDS = 400 V, VGS = 0 V Gate-Source Threshold Voltage at VGS = VDS, -ID = 250 A Drain-Source ON Resistance at -VGS = 5 V, -ID = 120 mA Capacitance at -VDS = 25 V, VGS = 0, f = 1 MHz Input Capacitance Output Capacitance Feedback Capacitance Switching Times at -VGS = 10 V, -VDS = 10 V, RD = 100 Turn-On Time Turn-Off Time Thermal Resistance Junction to Ambient Air 1) Min. 400 - - - 1 - Typ. 430 - - - 1.5 50 Max. - 100 100 500 2.5 60 Unit V nA nA nA V -V(BR)DSS -IGSSF -IGSSR -IDSS -VGS(th) RDS(on) CiSS COSS CrSS - - - 200 30 10 - - - pF pF pF ton toff RthJA - - - 10 50 - - - 1501) ns ns K/W Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case. |
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